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| Formosa MS B AV 7 0 Description The BAV70 consists of two diodes in a plastic surface mount package. The diodes are connected in series and the unit is designed for high-speed switching application in hybrid thick and thin-film circuits. Package Dimensions TPU.34)QBDLHF* Style : Pin1.Anode 2. Anode 3. Cathode REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF . G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0C 10 C Absolute Maximum Ratings at Ta = 25 : Parameter Junction Temperature Storage Temperature Reverse Voltage Forward Current Repetitive Forward Current Total Power Dissipation Symbol Tj Tstg Ratings +150 -65~+150 80 200 500 225 Unit PD V mA mA mW Characteristics Characteristic at Ta = 25 : Symbol Min. Max. Unit Test Conditions Reverse Breakdown Voltage V(BR) 80 - V IR=100uA VF(1) - 715 mV IF=1mA Forward Voltage VF(2) - 855 mV IF=10mA VF(3) - 1100 mV IF=50mA VF(4) - 1300 mV IF=100mA Reverse Current IR - 5 uA VR=80V Total Capacitance CT 1.5 pF VR=0, f=1MHz Reverse Recovery Time Trr - 15 nS IF=IR=10mA, RL=100 L measured at IR=1Ma,VR=5V Formosa MS Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of FMS. FMS reserves the right to make changes to its products without notice. FMS semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. FMS assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: 5F , No. 208 , Sec 3 , Chung Yang Rd. TuCheng , Taipei Hsien , Taiwan, R. O. C. TEL : 886-2-2269-6661 FAX : 886-2-2269-6141 China: No. Y Bldg , Zhijiang Hi-tech Park Binjiang Zone , Hangzhou , China TEL : 86-571-8669-8326 FAX : 86-571-8669-6991 |
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